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| www..com ISSUED DATE :2004/10/13 REVISED DATE :2006/12/25B GTS217E N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 22m 7A The GTS217E provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. *Low on-resistance *Capable of 2.5V gate drive *Optimal DC/DC battery application Description Features Package Dimensions REF. A A1 b c D Millimeter Min. 0.05 0.19 0.09 2.90 Max. 1.20 0.15 0.30 0.20 3.10 REF. E E1 e L S Millimeter Min. 6.20 4.30 0.45 0 Max. 6.60 4.50 0.75 8 0.65 BSC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Symbol VDS VGS ID @TA=25 : ID @TA=70 : IDM PD @TA=25 : Tj, Tstg Ratings 20 12 7 5.7 30 1.5 0.012 -55 ~ +150 Unit V V A A A W W/ : : Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Max. Value 83 Unit : /W Rthj-a GTS217E Page: 1/4 ISSUED DATE :2004/10/13 REVISED DATE :2006/12/25B Electrical Characteristics (Tj = 25 : unless otherwise specified) Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 : ) Drain-Source Leakage Current(Tj=55 : ) Symbol BVDSS VGS(th) gfs IGSS IDSS Min. 20 0.5 - Typ. 24 9.3 0.6 3.6 820 934 860 510 231 164 137 Max. 1.0 10 1 5 22 30 - Unit V V S uA uA uA m Test Conditions VGS=0, ID=250uA VDS=VGS, ID=250uA VDS=5V, ID=7A VGS= 10V VDS=16V, VGS=0 VDS=16V, VGS=0 VGS=4.5V, ID=6.6A VGS=2.5V, ID=5.5A ID=7A VDS=10V VGS=4.5V VDS=10V ID=1A VGS=4.5V RG=6 RL=10 VGS=0V VDS=10V f=1.0MHz Static Drain-Source On-Resistance Total Gate Charge 2 RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Symbol VSD Trr Qrr IS Gate-Source Charge Gate-Drain ("Miller") Change Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance nC ns - pF Source-Drain Diode Parameter Forward On Voltage 2 Min. - Typ. 15.2 6.3 - Max. 1.0 2.5 Unit V ns nC A Test Conditions IS=1.0A, VGS=0V IS=7A, VGS=0V dI/dt=100A/ s VD=VG=0V, VS=1.0V Reverse Recovery Time2 Reverse Recovery Charge Continuous Source Current (Body Diode) Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on FR4 board, t 10sec. GTS217E Page: 2/4 ISSUED DATE :2004/10/13 REVISED DATE :2006/12/25B Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Transfer Characteristics Fig 3. On-Resistance v.s. Drain Current and Gate Voltage 10 Fig 4. On-Resistance v.s. Junction Temperature 1 0.1 0.01 0.001 0.0001 0.00001 Fig 5. On-Resistance v.s. Gate-Source Voltage Fig 6. Body Diode Characteristics GTS217E Page: 3/4 ISSUED DATE :2004/10/13 REVISED DATE :2006/12/25B Fig 7. Maximum Safe Operating Area Fig 8. Single Pulse Power Rating Junction-to-Ambient v.s. Junction Temperature Fig 9. Gate Charge Characteristics Fig 10. Normalized Maximum Transient Thermal Impedance Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GTS217E Page: 4/4 |
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